technical data sheet 6 lake street, lawrence, ma 01841 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 website: http: //www.microsemi.com p-channel mosfet qualified per mil-prf-19500/595 t4-lds-0061 rev. 1 (080989) page 1 of 2 devices levels 2n7236 2N7236U jan jantx jantxv absolute maximum ratings (t c = +25c unless otherwise noted) parameters / test conditions symbol value unit drain ? source voltage v ds -100 vdc gate ? source voltage v gs 20 vdc continuous drain current t c = +25c i d1 -18 adc continuous drain current t c = +100c i d2 -11 adc max. power dissipation t c = +25c p tl 125 (1) w drain to source on state resistance r ds(on) 0.20 (2) operating & storage temperature t op , t stg -55 to +150 c note: (1) derated linearly by 1.0 w/c for t c > +25c (2) v gs = 10vdc, i d = -11a electrical characteristics (t a = +25c, unless otherwise noted) parameters / test conditions symbol min. max. unit drain-source breakdown voltage v gs = 0v, i d = 1madc v (br)dss -100 vdc gate-source voltage (threshold) v ds v gs , i d = -0.25ma v ds v gs , i d = -0.25ma, t j = +125c v ds v gs , i d = -0.25ma, t j = -55c v gs(th)1 v gs(th)2 v gs(th)3 -2.0 -1.0 -4.0 -5.0 vdc gate current v gs = 20v, v ds = 0v v gs = 20v, v ds = 0v, t j = +125c i gss1 i gss2 100 200 nadc drain current v gs = 0v, v ds = -80v v gs = 0v, v ds = -100v, t j = +125c v gs = 0v, v ds = -80v, t j = +125c i dss1 i dss2 i dss3 -25 -1.0 -0.25 adc madc madc static drain-source on-state resistance v gs = 10v, i d = -11a pulsed v gs = -10v, i d = -18a pulsed t j = +125c v gs = -10v, i d = -11a pulsed r ds(on)1 r ds(on)2 r ds(on)3 0.20 0.22 0.34 diode forward voltage v gs = 0v, i d = -18a pulsed v sd -5.0 vdc to-254aa u-pkg (smd-1) (to-267ab)
technical data sheet 6 lake street, lawrence, ma 01841 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 website: http: //www.microsemi.com p-channel mosfet qualified per mil-prf-19500/595 t4-lds-0061 rev. 1 (080989) page 2 of 2 dynamic characteristics parameters / test conditions symbol min. max. unit gate charge: on-state gate charge gate to source charge gate to drain charge v gs = -10v, i d = -18a v ds = -50v q g(on) q gs q gd 60 13 35.2 nc switching characteristics parameters / test conditions symbol min. max. unit switching time tests: turn-on delay time rinse time turn-off delay time fall time i d = -11a, v gs = -10vdc, gate drive impedance = 9.1 , v dd = -50vdc t d(on) t r t d(off) t f 35 85 85 65 ns diode reverse recovery time di/dt 100a/s, v dd 30v, i d = -18a t rr 280 ns
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